Sk Hynix Inc Patent Portfolio Statistics

Publication number: US20210089208A1

Abstract:
A memory system includes a storage medium including a plurality of nonvolatile memory devices grouped into a plurality of groups and a controller configured to manage the storage medium by a unit of a zone block, the controller selecting one nonvolatile memory device from each of the groups and configuring the zone block over the selected nonvolatile memory devices.

Publication date: 2021-03-25
Applicant: Sk Hynix Inc
Inventors: Jeon Seung Won

---

Publication number: US20170154662A1

Abstract:
This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Publication date: 2017-06-01
Applicant: Sk Hynix Inc
Inventors: Jung Ku-Youl

---

Publication number: US20160276036A1

Abstract:
Methods of determining distributions may include performing a number of hard reads, performing a number of background reads at a frequency based on the number of hard reads, and estimating a conditional probability density of a cell voltage based on the hard reads and the background reads.

Publication date: 2016-09-22
Applicant: Sk Hynix Inc
Inventors: David J Pignatelli

---