Toshiba Memory Corporation Patent Portfolio Statistics

Toshiba Memory Corporation

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Toshiba Memory Corporation look like?

Total Applications: 8,790
Granted Patents: 8,327
Grant Index 96.14 %
Abandoned/Rejected Applications: 334 (3.86%)
In-Process Applications: 129
Average Grant Time: 2.11 Years
Average Office Actions: 1.12

Which Technology Area Toshiba Memory Corporation is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2827 Semiconductors/Memory 1,207
2824 Semiconductors/Memory 1,078
2818 Semiconductors/Memory 401
2825 Semiconductors/Memory 385
2814 Semiconductors/Memory 216

How many patents are Toshiba Memory Corporation filing every year?

Year Total Applications
2022 0*
2021 19*
2020 60
2019 735
2018 722

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Toshiba Memory Corporation in USPTO?

Publication number: US20220028441A1
Application number: 17/495,999

According to an embodiment, a magnetoresistive memory device includes a layer stack. The layer stack includes a first ferromagnet, an insulator on the first ferromagnet, and a second ferromagnet on the insulator. A nonmagnet is provided above the layer stack. A first conductor is provided on the nonmagnet. A hard mask is provided above the first conductor. The nonmagnet includes a material that is removed at a first etching rate against a first ion beam. The first conductor includes a material that is removed at a second etching rate against the first ion beam. The first etching rate is lower than the second etching rate.

Publication date: 2022-01-27
Applicant: Toshiba Memory Corporation
Inventors: Shuichi Tsubata

Publication number: US20220024114A1
Application number: 17/494,594

According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 μm. The first surface includes an unevenness.

Publication date: 2022-01-27
Applicant: Toshiba Memory Corporation
Inventors: Asakawa Koji

Publication number: US20220020769A1
Application number: 17/491,958

A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.

Publication date: 2022-01-20
Applicant: Toshiba Memory Corporation
Inventors: Kawai Murato

How are Toshiba Memory Corporation’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/495,999 Magnetoresistive Memory Device And Method Of Manufacturing Magnetoresistive Memory Device OPAP Central, Docket
17/494,594 Template, Method For Manufacturing Template, And Pattern Formation Method OPAP Central, Docket
17/491,958 Semiconductor Memory Device And Production Method Thereof OPAP Central, Docket
17/483,052 Plasma Treatment Apparatus, Semiconductor Manufacturing Apparatus, And Manufacturing Method Of Semiconductor Device OPAP Central, Docket
17/481,892 Semiconductor Memory Device OPAP Central, Docket