Tokyo Electron Limited Patent Portfolio Statistics

Tokyo Electron Limited

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Tokyo Electron Limited look like?

Total Applications: 10,833
Granted Patents: 6,981
Grant Index 76.82 %
Abandoned/Rejected Applications: 2,106 (23.18%)
In-Process Applications: 1,672
Average Grant Time: 2.84 Years
Average Office Actions: 1.61

Which Technology Area Tokyo Electron Limited is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
1716 Coating, Etching, Cleaning, Single Crystal Growth 1,300
1713 Coating, Etching, Cleaning, Single Crystal Growth 799
Opap Parked GAU 572
1792 475
1718 Coating, Etching, Cleaning, Single Crystal Growth 345

How many patents are Tokyo Electron Limited filing every year?

Year Total Applications
2022 1*
2021 577*
2020 739
2019 644
2018 522

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Tokyo Electron Limited in USPTO?

Publication number: US20220028659A1
Application number: 17/498,063

Abstract:
An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

Publication date: 2022-01-27
Applicant: Tokyo Electron Limited
Inventors: Peter Ventzek


Publication number: US20220028665A1
Application number: 17/495,908

Abstract:
A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Publication date: 2022-01-27
Applicant: Tokyo Electron Limited
Inventors: Himori Shinji


Publication number: US20220020642A1
Application number: 17/487,987

Abstract:
Methods are disclosed that provide improved via profile control by forming atomic layer deposition (ALD) liners to protect side walls of vias during subsequent etch processes. ALD liners can be used for BEOL etch processes as well as for full self-aligned via (FSAV) processes and/or other processes. For one embodiment, ALD liners are used as protection or sacrificial layers for vias to reduce damage during multilayer via or trench etch processes. The ALD liners can also be deposited at different points within process flows, for example, before or after removal of organic planarization layers. The use of ALD liners facilitates shrinking of via critical dimensions (CDs) while still controlling via profiles for various process applications including dual Damascene processes and FSAV processes. In addition, the use of ALD liners improves overall CD control for via or hole formation as well as device yield and reliability.

Publication date: 2022-01-20
Applicant: Tokyo Electron Limited
Inventors: Sun Xinghua


How are Tokyo Electron Limited’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/498,063 Broadband Plasma Processing Systems And Methods OPAP Central, Docket
17/495,908 Plasma Processing Method And Plasma Processing Apparatus OPAP Central, Docket
17/487,987 Ald (Atomic Layer Deposition) Liner For Via Profile Control And Related Applications OPAP Central, Docket
17/484,914 Substrate Processing System And Temperature Control Method OPAP Central, Docket
17/448,608 Method Of Manufacturing Semiconductor Device OPAP Central, Docket