Semiconductor Components Industries, Llc Patent Portfolio Statistics

Semiconductor Components Industries, Llc

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Semiconductor Components Industries, Llc look like?

Total Applications: 6,419
Granted Patents: 5,680
Grant Index 94.27 %
Abandoned/Rejected Applications: 345 (5.73%)
In-Process Applications: 375
Average Grant Time: 2.49 Years
Average Office Actions: 1.51

Which Technology Area Semiconductor Components Industries, Llc is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2838 Electrical Circuits and Systems 791
2816 Semiconductors/Memory 243
2818 Semiconductors/Memory 216
2826 Semiconductors/Memory 192
2819 Semiconductors/Memory 177

How many patents are Semiconductor Components Industries, Llc filing every year?

Year Total Applications
2022 0*
2021 93*
2020 346
2019 400
2018 397

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Semiconductor Components Industries, Llc in USPTO?

Publication number: US20220029033A1
Application number: 17/450,734

Abstract:
A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.

Publication date: 2022-01-27
Applicant: Semiconductor Components Industries, Llc
Inventors: Andrei Konstantinov


Publication number: US20220028812A1
Application number: 17/450,007

Abstract:
A semiconductor wafer has an edge support ring around a perimeter of the semiconductor wafer and conductive layer formed over a surface of the semiconductor wafer within the edge support ring. A first stencil is disposed over the edge support ring with first openings aligned with the conductive layer. The first stencil includes a horizontal portion over the edge support ring, and a step-down portion extending the first openings to the conductive layer formed over the surface of the semiconductor wafer. The horizontal portion may have a notch with the edge support ring disposed within the notch. A plurality of bumps is dispersed over the first stencil to occupy the first openings over the conductive layer. A second stencil is disposed over the edge support ring with second openings aligned with the conductive layer to deposit a flux material in the second openings over the conductive layer.

Publication date: 2022-01-27
Applicant: Semiconductor Components Industries, Llc
Inventors: J Michael Seddon


Publication number: US20220013661A1
Application number: 17/448,916

Abstract:
In a general aspect, a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC MOSFET can also include a gate structure that includes a gate oxide layer, an aluminum nitride layer disposed on the gate oxide layer, and a gallium nitride layer of the second conductivity disposed on the aluminum nitride layer.

Publication date: 2022-01-13
Applicant: Semiconductor Components Industries, Llc
Inventors: Andrei Konstantinov


How are Semiconductor Components Industries, Llc’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/450,734 Schottky Rectifier With Surge-Current Ruggedness OPAP Central, Docket
17/450,007 Semiconductor Wafer And Method Of Ball Drop On Thin Wafer With Edge Support Ring OPAP Central, Docket
17/448,916 Silicon Carbide Field-Effect Transistors OPAP Central, Docket
17/448,924 Sensor-Less Circuits And Related Methods For Back Emf Zero Crossing Detection OPAP Central, Docket
17/448,577 Imaging Devices With Single-Photon Avalanche Diodes Having Sub-Exposures For High Dynamic Range Docketed New Case – Ready for Examination OPAP Central, Docket