Renesas Electronics Corporation Patent Portfolio Statistics

Publication number: US20220166443A1
Application number: 17/529,885

Abstract:
A semiconductor device performs sequential comparison of an analog input signal and a reference voltage to digitally convert the analog input signal. The semiconductor device includes an upper DAC generating a high-voltage region of the reference voltage based on a predetermined code, a lower DAC generating a low-voltage region of the reference voltage based on the code, and an injection DAC having the same configuration as that of the lower DAC and adjusting the low-voltage region of the reference voltage.

Publication date: 2022-05-26
Applicant: Renesas Electronics Corporation
Inventors: Ebata Tomohiko

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Publication number: US20220077191A1
Application number: 17/528,585

Abstract:
To provide a semiconductor device having a thin-film BOX-SOI structure and capable of realizing a high-speed operation of a logic circuit and a stable operation of a memory circuit. A semiconductor device according to the present invention includes a semiconductor support substrate, an insulation layer having a thickness of at mast 10 nm, and a semiconductor layer. In an upper surface of the semiconductor layer, a first field-effect transistor including a first gate electrode and constituting a logic circuit is formed. Further, in the upper surface of the semiconductor layer, a second field-effect transistor including a second gate electrode and constituting a memory circuit is formed. At least three well regions having different conductivity types are formed in the semiconductor support substrate. In the presence of the well regions, a region of the semiconductor support substrate below the first gate electrode and a region of the semiconductor support substrate below the second gate electrode are electrically separated from each other.

Publication date: 2022-03-10
Applicant: Renesas Electronics Corporation
Inventors: Iwamatsu Toshiaki

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Publication number: US20220149206A1
Application number: 17/521,041

Abstract:
A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate. The ferroelectric film and a metal film are not formed just above an element isolation region formed in a trench in an upper surface of the semiconductor substrate, but are formed on the semiconductor substrate in the active region defined by the element isolation region to prevent a state in which a polarization state in the ferroelectric film of the active region and a polarization state in the ferroelectric film on the element isolation region differ from each other.

Publication date: 2022-05-12
Applicant: Renesas Electronics Corporation
Inventors: Maruyama Takahiro

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