Nxp Usa, Inc Patent Portfolio Statistics

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Nxp Usa, Inc.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Nxp Usa, Inc. look like?

Assignee Art Units
Total Applications: 8,381 1,968,463
Granted Patents: 7,732 1,328,995
Grant Index 96.99% ↑ 83.41%
Abandoned/Rejected Applications: 240 (3.01%) 264,260 (16.59%)
In-Process Applications: 390 375,208
Average Grant Time: 2.51 Years ↓ 2.54 Years
Average Office Actions: 1.34 ↓ 1.45

Which Technology Area Nxp Usa, Inc. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2842 Electrical Circuits and Systems 482
2817 Semiconductors/Memory 243
2816 Semiconductors/Memory 241
2818 Semiconductors/Memory 186
2827 Semiconductors/Memory 172

How many patents are Nxp Usa, Inc. filing every year?

Year Total Applications Predicted
2022 0* 600
2021 99* 513
2020 249 494
2019 304 304
2018 269 –
2017 292 –
2016 485 –
2015 731 –
2014 903 –
2013 660 –

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Nxp Usa, Inc. in USPTO?

Publication number: US20220130768A1
Application number: 17/077,583

Abstract:
Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

Publication date: 2022-04-28
Applicant: Nxp Usa, Inc.
Inventors: Duncan Marshall Scott

Publication number: US20190292042A1
Application number: 16/440,446

Abstract:
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.

Publication date: 2019-09-26
Applicant: Nxp Usa, Inc.
Inventors: Lianjun Liu

Publication number: US20180047616A1
Application number: 15/723,374

Abstract:
A semiconductor device and a method for making the semiconductor device are provided. The method of making the semiconductor device may include patterning a layer for a first conductor and a second conductor, plating patterned portions of the layer to form the first conductor and the second conductor, removing patterned material to form an air gap between the first conductor and the second conductor, applying a self-supporting film on top of the first conductor and the second conductor to enclose the air gap, and reacting the self-supporting film causing the self-supporting film to be substantially non-conductive.

Publication date: 2018-02-15
Applicant: Nxp Usa, Inc.
Inventors: Douglas M Reber

How are Nxp Usa, Inc.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/077,583 Leadless Power Amplifier Packages Including Topside Terminations And Methods For The Fabrication Thereof Patented Case 2811 Parekh, Nitin
16/440,446 Integrating Diverse Sensors In A Single Semiconductor Device Patented Case 2819 Bradley, Stephen M
15/723,374 Method Of Forming Inter-Level Dielectric Structures On Semiconductor Devices Patented Case 2826 Carpenter, Robert K
15/464,474 Signal Transmission Method And Transmitting Device Patented Case 2477 Young, Steve R
15/364,273 Cavity Type Pressure Sensor Device Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362 2815 Diaz, Jose R