Ngk Insulators, Ltd Patent Portfolio Statistics

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Ngk Insulators, Ltd.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Ngk Insulators, Ltd. look like?

Assignee Art Units
Total Applications: 3,924 2,457,046
Granted Patents: 2,830 1,560,591
Grant Index 81.18% ↑ 76.04%
Abandoned/Rejected Applications: 656 (18.82%) 491,698 (23.96%)
In-Process Applications: 422 404,757
Average Grant Time: 2.69 Years ↑ 2.58 Years
Average Office Actions: 1.62 ↑ 1.5

Which Technology Area Ngk Insulators, Ltd. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
1784 Miscellaneous Articles, Stock Material 213
Opap Parked GAU 199
2834 Electrical Circuits and Systems 108
1775 Chemical Apparatus, Petroleum Processing, Separation and Purification, Analytical Chemistry, Disinfecting and Sterilizing, Liquid and Gas Apparatus 103
2874 Optics 98

How many patents are Ngk Insulators, Ltd. filing every year?

Year Total Applications Predicted
2022 0* 944
2021 184* 828
2020 211 691
2019 222 222
2018 158 –
2017 192 –
2016 161 –
2015 164 –
2014 148 –
2013 115 –

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Ngk Insulators, Ltd. in USPTO?

Publication number: US20220112599A1
Application number: 17/644,827

Abstract:
A ceramic heater includes a disk-shaped ceramic plate having a wafer placement surface on a front surface thereof, the ceramic plate having a plasma electrode and a heater electrode embedded therein in this order, from closest to the wafer placement surface to farthest, in such a manner that the plasma electrode and the heater electrode are spaced apart from each other; a cylindrical shaft that supports the ceramic plate from a back surface of the ceramic plate; a plasma electrode connecting member arranged in the cylindrical shaft and connected to the plasma electrode; a heater electrode connecting member arranged in the cylindrical shaft and connected to the heater electrode; and a planar shield portion arranged on the back surface of the ceramic plate or embedded in the ceramic plate so as to be closer to the back surface than the heater electrode, the planar shield portion being connected to ground.

Publication date: 2022-04-14
Applicant: Ngk Insulators, Ltd.
Inventors: Hara Tomohiro

Publication number: US20220108909A1
Application number: 17/644,361

Abstract:
A member for semiconductor manufacturing apparatus has a structure in which a hollow ceramic shaft is provided on a back surface of a ceramic plate having a front surface serving as a wafer placement surface. The member for semiconductor manufacturing apparatus includes an RF electrode embedded in the ceramic plate, an RF connector disposed outside of the hollow interior of the ceramic shaft, and an RF link member provided between the RF connector and the RF electrode. The RF link member has a branching portion consisting of a plurality of RF rods, and the branching portion extends to the outside of the ceramic shaft.

Publication date: 2022-04-07
Applicant: Ngk Insulators, Ltd.
Inventors: Ryuji Tamura

Publication number: US20220102240A1
Application number: 17/547,379

Abstract:
A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.

Publication date: 2022-03-31
Applicant: Ngk Insulators, Ltd.
Inventors: Ebigase Takashi

How are Ngk Insulators, Ltd.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/644,827 Ceramic Heater Docketed New Case – Ready for Examination OPAP Central, Docket
17/644,361 Member For Semicondutor Manufacturing Apparatus Docketed New Case – Ready for Examination OPAP Central, Docket
17/547,379 Bonded Substrate, And Method For Manufacturing Bonded Substrate Docketed New Case – Ready for Examination OPAP Central, Docket
17/643,600 Wafer Placement Table And Method Of Manufacturing The Same Docketed New Case – Ready for Examination OPAP Central, Docket
17/546,551 Composite Substrate, Elastic Wave Element, And Production Method For Composite Substrate Docketed New Case – Ready for Examination OPAP Central, Docket