Micron Technology, Inc Patent Portfolio Statistics

Publication number: US20220027096A1
Application number: 17/498,842

Abstract:
A method includes receiving, by a processing device, an indication that a host system is to become idle for a first period of time, identifying, by the processing device based on the first period of time, a background operation at a memory sub-system, and causing, by the processing device, execution of the background operation at the memory sub-system during the first period of time.

Publication date: 2022-01-27
Applicant: Micron Technology, Inc.
Inventors: Kale Poorna

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Publication number: US20220027062A1
Application number: 17/450,653

Abstract:
A processing device in a memory sub-system identifies a plurality of word lines at a first portion of a memory device, determines a respective error rate for each of the plurality of word lines, and determines that a first error rate of a first word line of the plurality of word lines and a second error rate of a second word line of the plurality of word lines satisfy a first threshold condition pertaining to an error rate threshold. The processing device further identifies a third word line of the plurality of word lines that is proximate to the first word line and the second word line and relocates data stored at the third word line to a second portion of the memory device, wherein the second portion of the memory device is associated with a lower read latency than the first portion of the memory device.

Publication date: 2022-01-27
Applicant: Micron Technology, Inc.
Inventors: Kishore Kumar Muchherla

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Publication number: US20220028733A1
Application number: 17/499,316

Abstract:
A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material. Other aspects, including structure independent of method, are disclosed.

Publication date: 2022-01-27
Applicant: Micron Technology, Inc.
Inventors: Kurapati Murthy Satyanarayana Venkata

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