Infineon Technologies Austria Ag Patent Portfolio Statistics

Publication number: US20220093496A1
Application number: 17/540,512

Abstract:
A semiconductor device forming a bidirectional switch includes first and second carriers, first and second semiconductor chips arranged on the first and second carriers, respectively, a first row of terminals arranged along a first side face of the carrier, a second row of terminals arranged along a second side face of the carrier opposite the first side face, and an encapsulation body encapsulating the first and second semiconductor chips. Each row of terminals includes a gate terminal, a sensing terminal and at least one power terminal of the bidirectional switch.

Publication date: 2022-03-24
Applicant: Infineon Technologies Austria Ag
Inventors: Klaus Schiess

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Publication number: US20220077309A1
Application number: 17/528,313

Abstract:
A method includes forming a trench in a first surface in an edge region of a semiconductor body, forming a plurality of superjunction transistor cells in an inner region of a semiconductor body, and forming an insulation layer on the first surface of the semiconductor body in the edge region and in the inner region, wherein forming the insulation layer includes a thermal oxidation process.

Publication date: 2022-03-10
Applicant: Infineon Technologies Austria Ag
Inventors: Franz Hirler

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Publication number: US20220059453A1
Application number: 17/518,098

Abstract:
A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Publication date: 2022-02-24
Applicant: Infineon Technologies Austria Ag
Inventors: Christian Neidhart Thomas

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