Hefei Xinsheng Optoelectronics Technology Co., Ltd Patent Portfolio Statistics

Hefei Xinsheng Optoelectronics Technology Co., Ltd

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Hefei Xinsheng Optoelectronics Technology Co., Ltd look like?

Total Applications: 12
Granted Patents: 9
Grant Index 90.0 %
Abandoned/Rejected Applications: 1 (10.0%)
In-Process Applications: 2
Average Grant Time: 2.14 Years
Average Office Actions: 1.56

Which Technology Area Hefei Xinsheng Optoelectronics Technology Co., Ltd is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
Opap Parked GAU 2
1716 Coating, Etching, Cleaning, Single Crystal Growth 1
1722 Fuel Cells, Battery, Flammable Gas, Solar Cells, Liquid Crystal Compositions 1
1795 1
2622 Selective Visual Display Systems 1

How many patents are Hefei Xinsheng Optoelectronics Technology Co., Ltd filing every year?

Year Total Applications
2022 0*
2021 2*
2020 0
2019 0
2018 1

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Hefei Xinsheng Optoelectronics Technology Co., Ltd in USPTO?

Publication number: US20220020867A1
Application number: 17/449,607

Abstract:
A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.

Publication date: 2022-01-20
Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd
Inventors: Cheng Leilei


Publication number:
Application number: 17/433,210

Abstract:
None

Publication date:
Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd
Inventors: Cheng Leilei


Publication number:
Application number: 17/429,310

Abstract:
None

Publication date:
Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd
Inventors: Guangyao Li


How are Hefei Xinsheng Optoelectronics Technology Co., Ltd’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/449,607 Manufacturing Method Of Display Substrate, Display Substrate And Display Device OPAP Central, Docket
17/433,210 Oled Display Substrate And Manufacturing Method Thereof, And Display Device Sent to Classification contractor
17/429,310 Test Circuit, Array Substrate, And Display Panel Docketed New Case – Ready for Examination OPAP Central, Docket
17/428,178 Image Processing Method, Image Processing Circuit And Display Apparatus Application Undergoing Preexam Processing
17/419,944 Display Substrate, Display Panel And Display Apparatus Docketed New Case – Ready for Examination OPAP Central, Docket