Globalfoundries Inc Patent Portfolio Statistics

Globalfoundries Inc.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Globalfoundries Inc. look like?

Total Applications: 23,556
Granted Patents: 20,595
Grant Index 88.47 %
Abandoned/Rejected Applications: 2,685 (11.53%)
In-Process Applications: 272
Average Grant Time: 2.45 Years
Average Office Actions: 1.42

Which Technology Area Globalfoundries Inc. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2825 Semiconductors/Memory 1,172
2812 Semiconductors/Memory 1,085
2818 Semiconductors/Memory 1,039
2822 Semiconductors/Memory 944
2813 Semiconductors/Memory 887

How many patents are Globalfoundries Inc. filing every year?

Year Total Applications
2022 0*
2021 1*
2020 224
2019 339
2018 550

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Globalfoundries Inc. in USPTO?

Publication number:
Application number: 17/542,158

Abstract:
None

Publication date:
Applicant: Globalfoundries Inc.
Inventors: Kim Ryoung-Han


Publication number: US20220028992A1
Application number: 17/498,241

Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

Publication date: 2022-01-27
Applicant: Globalfoundries Inc.
Inventors: Anthony K Stamper


Publication number: US20220021205A1
Application number: 17/490,371

Abstract:
A circuit structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.

Publication date: 2022-01-20
Applicant: Globalfoundries Inc.
Inventors: Mitra Souvick


How are Globalfoundries Inc.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/542,158 Multilayer Interconnect Structure And Method For Integrated Circuits Docketed New Case – Ready for Examination 3991 Witz, Jean C
17/498,241 Vertically Stacked Field Effect Transistors OPAP Central, Docket
17/490,371 Electrostatic Discharge Clamp Structures OPAP Central, Docket
17/473,164 Double Mesa Heterojunction Bipolar Transistor Docketed New Case – Ready for Examination OPAP Central, Docket
17/462,491 Waveguide Structures Docketed New Case – Ready for Examination OPAP Central, Docket