Fuji Electric Co., Ltd Patent Portfolio Statistics

tip_user1

Fuji Electric Co., Ltd.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Fuji Electric Co., Ltd. look like?

Assignee Art Units
Total Applications: 4,036 2,345,811
Granted Patents: 3,316 1,567,071
Grant Index 90.08% ↑ 80.13%
Abandoned/Rejected Applications: 365 (9.92%) 388,518 (19.87%)
In-Process Applications: 329 390,222
Average Grant Time: 2.18 Years ↓ 2.43 Years
Average Office Actions: 1.25 ↓ 1.39

Which Technology Area Fuji Electric Co., Ltd. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2838 Electrical Circuits and Systems 375
2823 Semiconductors/Memory 175
2842 Electrical Circuits and Systems 157
Opap Parked GAU 152
2836 Electrical Circuits and Systems 121

How many patents are Fuji Electric Co., Ltd. filing every year?

Year Total Applications Predicted
2022 0* 760
2021 194* 679
2020 272 746
2019 245 245
2018 319 –
2017 322 –
2016 346 –
2015 260 –
2014 262 –
2013 218 –

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Fuji Electric Co., Ltd. in USPTO?

Publication number: None
Application number: 17/617,578

Abstract:
–

Publication date: –
Applicant: Fuji Electric Co., Ltd.
Inventors: Guo Jun

Publication number: US20220093728A1
Application number: 17/457,908

Abstract:
A semiconductor device is provided including: a semiconductor substrate having a first-conductivity-type drift region; a second-conductivity-type base region provided above the drift region inside the semiconductor substrate; an accumulation region provided between the drift region and the lower surface of the base region inside the semiconductor substrate, and having a lower second-conductivity-type carrier mobility than the drift region and the base region; a gate trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, where the gate trench portion is in contact with the base region; and a carrier passage region occupying at least a partial region between the accumulation region and the gate trench portion inside the semiconductor substrate, where the carrier passage region has a higher second-conductivity-type carrier mobility than the accumulation region.

Publication date: 2022-03-24
Applicant: Fuji Electric Co., Ltd.
Inventors: Naito Tatsuya

Publication number: US20220084905A1
Application number: 17/538,829

Abstract:
A semiconductor device includes an insulating substrate, semiconductor elements mounted on the insulating substrate, and a cooler for cooling the semiconductor elements. The cooler includes a heat dissipating substrate having bonding and heat dissipating surfaces opposite to each other, the bonding surface being bonded to the second surface of the insulating substrate, a plurality of fins on the heat dissipating surface, a reinforcing plate having first and second surfaces opposite to each other and covering the fins, the first surface being bonded to tips of the fins, and a cooling case including a recessed part to house the fins and reinforcing plate. A first gap between two adjacent fins, measured in a direction parallel to the heat dissipating substrate, is larger than a second gap between the reinforcing plate and a bottom of the first recessed part, measured in a thickness direction.

Publication date: 2022-03-17
Applicant: Fuji Electric Co., Ltd.
Inventors: Koyama Takahiro

How are Fuji Electric Co., Ltd.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/617,578 Blockchain-Based Trusted Transaction Method For Data Product Sent to Classification contractor – –
17/457,908 Semiconductor Device Docketed New Case – Ready for Examination OPAP Central, Docket
17/538,829 Semiconductor Device Docketed New Case – Ready for Examination OPAP Central, Docket
17/538,331 Silicon Carbide Semiconductor Device And Method Of Manufacturing Silicon Carbide Semiconductor Device Docketed New Case – Ready for Examination OPAP Central, Docket