Cree, Inc Patent Portfolio Statistics

Publication number: US20220028821A1
Application number: 17/494,909

Abstract:
A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

Publication date: 2022-01-27
Applicant: Cree, Inc.
Inventors: Kevin Schneider

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Publication number: US20220020874A1
Application number: 17/492,032

Abstract:
A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.

Publication date: 2022-01-20
Applicant: Cree, Inc.
Inventors: Simon Wood

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Publication number: –
Application number: 17/426,669

Abstract:
None

Publication date: –
Applicant: Cree, Inc.
Inventors: Kumar S Vikram

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