Commissariat A L’Energie Atomique Et Aux Energies Patent Portfolio Statistics
Profile Summary
This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.
How does the overall patent portfolio of Commissariat A L’Energie Atomique Et Aux Energies look like?
| Total Applications: | 10 |
| Granted Patents: | 7 |
| Grant Index | 77.78 % |
| Abandoned/Rejected Applications: | 2 (22.22%) |
| In-Process Applications: | 1 |
| Average Grant Time: | 2.73 Years |
| Average Office Actions: | 2.14 |
Which Technology Area Commissariat A L’Energie Atomique Et Aux Energies is filing most patents in? (Last 10 years)
| Art Unit | Definition | Total Applications |
| 1723 | Fuel Cells, Battery, Flammable Gas, Solar Cells, Liquid Crystal Compositions | 1 |
| 1744 | Tires, Adhesive Bonding, Glass/Paper making, Plastics Shaping & Molding | 1 |
| 1783 | Miscellaneous Articles, Stock Material | 1 |
| 2688 | Telemetry & Code Generation | 1 |
| 2831 | Electrical Circuits and Systems | 1 |
How many patents are Commissariat A L’Energie Atomique Et Aux Energies filing every year?
| Year | Total Applications |
| 2022 | 0* |
| 2021 | 0* |
| 2020 | 1 |
| 2019 | 2 |
| 2018 | 0 |
*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published
Recently filed patent applications of Commissariat A L’Energie Atomique Et Aux Energies in USPTO?
Application number: 17/435,102
Abstract:
None
Publication date: –
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Aurlien Suhm
Publication number: US20210391326A1
Application number: 17/461,428
Abstract:
a first transistor of a first type, in particular N or P, the first transistor having a channel formed in one or more first semi-conducting rods of a semi-conducting structure including semi-conducting rods disposed above each other and aligned with each other,
a second transistor of a second type, in particular P or N, with a gate-surrounding gate and a channel region formed in one or more second semi-conducting rods of said semi-conducting structure and disposed above the first semi-conducting rods, the source block of the second transistor being distinct from the source and drain block of the second transistor, the drain block of the second transistor being distinct from the drain and source blocks of the second transistor.
Publication date: 2021-12-16
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Bernard Previtali
Publication number: –
Application number: 17/434,242
Abstract:
None
Publication date: –
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Dubrulle Paul
How are Commissariat A L’Energie Atomique Et Aux Energies’s applications performing in USPTO?
| Application Number | Title | Status | Art Unit | Examiner |
| 17/435,102 | Method For Coating Chips | – | – | – |
| 17/461,428 | Architecture With Stacked N And P Transistors With A Channel Structure Formed Of Nanowires | Docketed New Case – Ready for Examination | OPAP | Central, Docket |
| 17/434,242 | Method For Validating A Data Flow System | – | – | – |
| 17/443,131 | Method Of Making An Individualization Zone Of An Integrated Circuit | – | OPAP | Central, Docket |
| 17/381,855 | Nuclear Component With Metastable Cr Coating, Dli-Mocvd Method For Producing Same, And Uses For Controlling Oxidation/Hydridation | Docketed New Case – Ready for Examination | OPAP | Central, Docket |
