Commissariat A L’Energie Atomique Et Aux Energies Patent Portfolio Statistics

Commissariat A L’Energie Atomique Et Aux Energies

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Commissariat A L’Energie Atomique Et Aux Energies look like?

Total Applications: 10
Granted Patents: 7
Grant Index 77.78 %
Abandoned/Rejected Applications: 2 (22.22%)
In-Process Applications: 1
Average Grant Time: 2.73 Years
Average Office Actions: 2.14

Which Technology Area Commissariat A L’Energie Atomique Et Aux Energies is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
1723 Fuel Cells, Battery, Flammable Gas, Solar Cells, Liquid Crystal Compositions 1
1744 Tires, Adhesive Bonding, Glass/Paper making, Plastics Shaping & Molding 1
1783 Miscellaneous Articles, Stock Material 1
2688 Telemetry & Code Generation 1
2831 Electrical Circuits and Systems 1

How many patents are Commissariat A L’Energie Atomique Et Aux Energies filing every year?

Year Total Applications
2022 0*
2021 0*
2020 1
2019 2
2018 0

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Commissariat A L’Energie Atomique Et Aux Energies in USPTO?

Publication number:
Application number: 17/435,102

Abstract:
None

Publication date:
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Aurlien Suhm


Publication number: US20210391326A1
Application number: 17/461,428

Abstract:
Implementation of a device with stacked transistors comprising:
a first transistor of a first type, in particular N or P, the first transistor having a channel formed in one or more first semi-conducting rods of a semi-conducting structure including semi-conducting rods disposed above each other and aligned with each other,
a second transistor of a second type, in particular P or N, with a gate-surrounding gate and a channel region formed in one or more second semi-conducting rods of said semi-conducting structure and disposed above the first semi-conducting rods, the source block of the second transistor being distinct from the source and drain block of the second transistor, the drain block of the second transistor being distinct from the drain and source blocks of the second transistor.


Publication date: 2021-12-16
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Bernard Previtali


Publication number:
Application number: 17/434,242

Abstract:
None

Publication date:
Applicant: Commissariat A L’Energie Atomique Et Aux Energies
Inventors: Dubrulle Paul


How are Commissariat A L’Energie Atomique Et Aux Energies’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/435,102 Method For Coating Chips
17/461,428 Architecture With Stacked N And P Transistors With A Channel Structure Formed Of Nanowires Docketed New Case – Ready for Examination OPAP Central, Docket
17/434,242 Method For Validating A Data Flow System
17/443,131 Method Of Making An Individualization Zone Of An Integrated Circuit OPAP Central, Docket
17/381,855 Nuclear Component With Metastable Cr Coating, Dli-Mocvd Method For Producing Same, And Uses For Controlling Oxidation/Hydridation Docketed New Case – Ready for Examination OPAP Central, Docket