Asm Ip Holding B.V Patent Portfolio Statistics

Asm Ip Holding B.V.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Asm Ip Holding B.V. look like?

Total Applications: 1,023
Granted Patents: 633
Grant Index 94.2 %
Abandoned/Rejected Applications: 39 (5.8%)
In-Process Applications: 340
Average Grant Time: 2.58 Years
Average Office Actions: 2.07

Which Technology Area Asm Ip Holding B.V. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
Opap Parked GAU 147
1716 Coating, Etching, Cleaning, Single Crystal Growth 117
1715 Coating, Etching, Cleaning, Single Crystal Growth 104
1718 Coating, Etching, Cleaning, Single Crystal Growth 54
1713 Coating, Etching, Cleaning, Single Crystal Growth 52

How many patents are Asm Ip Holding B.V. filing every year?

Year Total Applications
2022 0*
2021 154*
2020 177
2019 78
2018 118

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Asm Ip Holding B.V. in USPTO?

Publication number: US20220025513A1
Application number: 17/450,742

Abstract:
Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

Publication date: 2022-01-27
Applicant: Asm Ip Holding B.V.
Inventors: Blomberg E Tom


Publication number: US20220028694A1
Application number: 17/498,805

Abstract:
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition are disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a rhenium precursor; and contacting the substrate with a second vapor phase reactant. Semiconductor device structures including a rhenium-containing film formed by the methods of the disclosure are also disclosed.

Publication date: 2022-01-27
Applicant: Asm Ip Holding B.V.
Inventors: Sharma Varun


Publication number: US20220002868A1
Application number: 17/448,586

Abstract:
Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

Publication date: 2022-01-06
Applicant: Asm Ip Holding B.V.
Inventors: Leskela Markku


How are Asm Ip Holding B.V.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17/450,742 Selective Deposition On Metal Or Metallic Surfaces Relative To Dielectric Surfaces OPAP Central, Docket
17/498,805 Methods For Forming A Rhenium-Containing Film On A Substrate By A Cyclical Deposition Process And Related Semiconductor Device Structures OPAP Central, Docket
17/448,586 Atomic Layer Deposition Of Rhenium Containing Thin Films Docketed New Case – Ready for Examination OPAP Central, Docket
17/470,048 Storage Apparatus For Storing Cassettes For Substrates And Processing Apparatus Equipped Therewith Docketed New Case – Ready for Examination OPAP Central, Docket
17/465,127 Titanium Aluminum And Tantalum Aluminum Thin Films Docketed New Case – Ready for Examination OPAP Central, Docket