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Micron Technology, Inc Patent Portfolio Statistics

Micron Technology, Inc

Micron Technology, Inc`s Profile

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Micron Technology, Inc look like?

Total Applications: 998
Granted Patents: 876
Grant Index 98.76 %
Abandoned/Rejected Applications: 11 (1.24%)
In-Process Applications: 109
Average Grant Time: 2.28 Years
Average Office Actions: 1.29

Which Technology Area Micron Technology, Inc is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2824 Semiconductors/Memory 180
2827 Semiconductors/Memory 138
2818 Semiconductors/Memory 65
2825 Semiconductors/Memory 50
2812 Semiconductors/Memory 35

How many patents are Micron Technology, Inc filing every year?

Year Total Applications
2022 0*
2021 16*
2020 152
2019 83
2018 39

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Micron Technology, Inc in USPTO?

Publication number: US20210050339A1

A semiconductor device assembly that includes first and second semiconductor devices connected directly to a first side of a substrate and a plurality of interconnects connected to a second side of the substrate. The substrate is configured to enable the first and second semiconductor devices to communicate with each other through the substrate. The substrate may be a silicon substrate that includes complementary metal-oxide-semiconductor (CMOS) circuits. The first semiconductor device may be a processing unit and the second semiconductor device may be a memory device, which may be a high bandwidth memory device. A method of making a semiconductor device assembly includes applying CMOS processing to a silicon substrate, forming back end of line (BEOL) layers on a first side of the substrate, attaching a memory device and a processing unit directly to the BEOL layers, and forming a redistribution layer on the second side of the substrate.

Publication date: 2021-02-18
Applicant: Micron Technology, Inc
Inventors: Chan H Yoo

Publication number: US20190354530A1

Disclosed are methods and devices, among which is a system that includes a device that includes one or more pattern-recognition processors in a pattern-recognition cluster, for example. One of the one or more pattern-recognition processors may be initialized to perform as a direct memory access master device able to control the remaining pattern-recognition processors for synchronized processing of a data stream.

Publication date: 2019-11-21
Applicant: Micron Technology, Inc
Inventors: B Harold Noyes

Publication number: US20150140742A1

Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The walls are spaced from one another by trenches that extend primarily along the first direction. Steps are formed along bottoms of the trenches. Gatelines are formed on the steps and along lower regions of the walls. After the gatelines are formed, the walls are patterned into spaced-apart pillars that have bottom regions below the gatelines. In some embodiments the gated devices may be transistors or thyristors.

Publication date: 2015-05-21
Applicant: Micron Technology, Inc
Inventors: Carlo Pozzi

How are Micron Technology, Inc’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17087043 Graphics Processing Unit And High Bandwidth Memory Integration Using Integrated Interface And Silicon Interposer Non Final Action Mailed 2818 Nguyen, Cuong B
16527217 Devices, Systems, And Methods To Synchronize Simultaneous Dma Parallel Processing Of A Single Data Stream By Multiple Devices Patented Case 2184 Shyu, Jing-Yih
14601435 Methods Of Forming Gated Devices Patented Case 2817 Smith, Bradley