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Globalfoundries Inc Patent Portfolio Statistics

Globalfoundries Inc

Globalfoundries Inc`s Profile

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Globalfoundries Inc look like?

Total Applications: 78
Granted Patents: 63
Grant Index 86.3 %
Abandoned/Rejected Applications: 10 (13.7%)
In-Process Applications: 5
Average Grant Time: 2.74 Years
Average Office Actions: 1.98

Which Technology Area Globalfoundries Inc is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2812 Semiconductors/Memory 8
2813 Semiconductors/Memory 6
2891 Semiconductors/Memory 6
2895 Semiconductors/Memory 6
2897 Semiconductors/Memory 6

How many patents are Globalfoundries Inc filing every year?

Year Total Applications
2022 0*
2021 0*
2020 5
2019 0
2018 5

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Globalfoundries Inc in USPTO?

Publication number:

Abstract:
None

Publication date:
Applicant: Globalfoundries Inc
Inventors: Kim Ryoung-Han


Publication number: US20220028992A1

Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

Publication date: 2022-01-27
Applicant: Globalfoundries Inc
Inventors: M Shank Steven


Publication number: US20220021205A1

Abstract:
A circuit structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.

Publication date: 2022-01-20
Applicant: Globalfoundries Inc
Inventors: Mickey Yu


How are Globalfoundries Inc’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
17542158 Multilayer Interconnect Structure And Method For Integrated Circuits Docketed New Case – Ready for Examination 3991 Witz, Jean C
17498241 Vertically Stacked Field Effect Transistors OPAP Central, Docket
17490371 Electrostatic Discharge Clamp Structures OPAP Central, Docket
17473164 Double Mesa Heterojunction Bipolar Transistor Docketed New Case – Ready for Examination OPAP Central, Docket
17462491 Waveguide Structures Docketed New Case – Ready for Examination OPAP Central, Docket