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Fuji Electric Co., Ltd Patent Portfolio Statistics

Fuji Electric Co., Ltd

Fuji Electric Co., Ltd`s Profile

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Fuji Electric Co., Ltd look like?

Total Applications: 35
Granted Patents: 29
Grant Index 82.86 %
Abandoned/Rejected Applications: 6 (17.14%)
In-Process Applications: 0
Average Grant Time: 2.21 Years
Average Office Actions: 1.34

Which Technology Area Fuji Electric Co., Ltd is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2814 Semiconductors/Memory 5
2811 Semiconductors/Memory 2
2815 Semiconductors/Memory 2
2823 Semiconductors/Memory 2
2891 Semiconductors/Memory 2

How many patents are Fuji Electric Co., Ltd filing every year?

Year Total Applications
2022 0*
2021 0*
2020 0
2019 0
2018 0

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Fuji Electric Co., Ltd in USPTO?

Publication number: US20180315842A1

Abstract:
The SiC-IGBT includes a p-type collector layer, an n−-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n−-type voltage-blocking-layer, n+-type emitter regions provided in an upper portion of the p-type base region, a gate insulating film provided in an upper portion of the voltage-blocking-layer, and a gate electrode provided on the gate insulating film. The p-type buffer layer has thickness of five micrometers or more and 20 micrometers or less and is doped with Al at impurity concentration of 5×1017 cm−3 or more and 5×1018 cm−3 or less and doped with B at impurity concentration of 2×1016 cm−3 or more and less than 5×1017 cm−3.

Publication date: 2018-11-01
Applicant: Fuji Electric Co., Ltd
Inventors: Tawara Takeshi


How are Fuji Electric Co., Ltd’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
15963698 Silicon Carbide Epitaxial Wafer, Silicon Carbide Insulated Gate Bipolar Transistor, And Method Of Manufacturing The Same Patented Case 2895 Naraghi, Ali