Freescale Semiconductor, Inc Patent Portfolio Statistics

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Freescale Semiconductor, Inc.

Profile Summary

This article summarizes the perfomance of the assignee in the recent years. The overall statistics for this portfolio help to analyze the areas where the assignee is performing well. The filing trend, perfomance across the tech centers and the perfomance of the recent applications has been mentioned below. All the stats are calculated based on the perfomance in USPTO.

How does the overall patent portfolio of Freescale Semiconductor, Inc. look like?

Assignee Art Units
Total Applications: 10,565 1,636,979
Granted Patents: 9,547 1,311,504
Grant Index 91.05% ↑ 83.21%
Abandoned/Rejected Applications: 938 (8.95%) 264,559 (16.79%)
In-Process Applications: 80 60,916
Average Grant Time: 2.59 Years ↑ 2.49 Years
Average Office Actions: 1.33 ↓ 1.4

Which Technology Area Freescale Semiconductor, Inc. is filing most patents in? (Last 10 years)

Art Unit Definition Total Applications
2818 Semiconductors/Memory 379
2816 Semiconductors/Memory 365
2842 Electrical Circuits and Systems 362
2812 Semiconductors/Memory 293
2817 Semiconductors/Memory 257

How many patents are Freescale Semiconductor, Inc. filing every year?

Year Total Applications Predicted
2022 0* 400
2021 0* 350
2020 6 298
2019 8 8
2018 14 –
2017 13 –
2016 287 –
2015 675 –
2014 901 –
2013 627 –

*The drop in the number of applications filed in last two years compared to previous years is because applications can take up to 18 months to get published

Recently filed patent applications of Freescale Semiconductor, Inc. in USPTO?

Publication number: US10110287B1
Application number: 15/688,029

Abstract:
A transmitter generates precoding matrices for communication channels of a transmitter, The transmitter includes a plurality of user-specific channels, with each user specific channel associated with a different set of user equipment (UE) receive antennas. For precoding, the transmitter generates a baseline channel matrix reflecting the characteristics of the communication medium employed to transmit data to the different user equipment (UEs). For each user-specific channel, the transmitter generates a set of null space vectors wherein only a subset of the generated null space vectors generated by the transmitter are used to precode the data. To identify the combination of null space vectors to be used for each channel, the transmitter calculates a quality score for each such combination of null space vectors. The transmitter uses the subset of null vectors that yields the highest score to precode the data.

Publication date: –
Applicant: Freescale Semiconductor, Inc.
Inventors: Crasmariu Victor-Florin

Publication number: US20180323836A1
Application number: 15/668,345

Abstract:
A receiver decodes received data streams based on a subset of candidate decoding constellation points. A first stage of a decoder of the receiver selects a subset of candidate decoding constellation points by identifying a decoded value for an initial data stream of the set of data streams. A second stage then applies MMSE error detection to each of the constellation points in the selected subset, and calculates an error metric based on the MMSE error detection results. The decoder selects the constellation points having the lowest error metrics, and uses the selected constellation points as an initial set of points for decoding the next data stream to be decoded.

Publication date: 2018-11-08
Applicant: Freescale Semiconductor, Inc.
Inventors: Arvinte Marius Octavian

Publication number: US20170373053A1
Application number: 15/344,131

Abstract:
An ESD protection structure formed within a semiconductor substrate of an integrated circuit device. The ESD protection structure comprises a thyristor structure being formed from a first P-doped section forming an anode of the thyristor structure, a first N-doped section forming a collector node of the thyristor structure, a second P-doped section, and a second N-doped section forming a cathode of the thyristor structure. A low-resistance coupling is provided between an upper surface region of the collector node of the thyristor structure and the anode of the thyristor structure.

Publication date: 2017-12-28
Applicant: Freescale Semiconductor, Inc.
Inventors: Jean-Philippe Laine

How are Freescale Semiconductor, Inc.’s applications performing in USPTO?

Application Number Title Status Art Unit Examiner
15/688,029 Transmitter Precoding Based On Quality Score Patented Case 2631 Kim, Kevin
15/668,345 Complexity Reduction For Receiver Decoding Patented Case 2633 Corrielus, Jean B
15/344,131 Esd Protection Structure Patented Case 2897 Hall, Victoria Kathleen
15/344,250 Wireless Power Transmitters With Wide Input Voltage Range And Methods Of Their Operation Patented Case 2851 Ngo, Brian
15/344,304 Phase Shift And Attenuation Circuits For Use With Multiple-Path Amplifiers Patented Case 2842 Almo, Khareem E